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| HI-REL GaAlAs IR EMITTERS 1.00 MIN. OD-880WJ FEATURES GLASS .006 HIGH MAX .015 ANODE (CASE) .209 .220 * High reliability LPE GaAlAs IRLEDs * High power output * 880nm peak emission * Hermetically sealed TO-46 package * MIL-S-19500 screening available .041 .183 .152 .187 .156 .017 .098 .112 .100 * No internal coatings All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. www..com .143 .150 CATHODE .036 45 ELECTRO-OPTICAL CHARACTERISTICS AT 25C PARAMETERS Total Power Output, Po Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10A VR = 0V MIN 7 TYP 9 880 80 80 1.55 5 30 17 0.5 0.5 1.9 MAX UNITS mW nm nm Deg Volts Volts pF sec sec ABSOLUTE MAXIMUM RATINGS AT 25C CASE Power Dissipation1 190mW 100mA 3A 5V 240C Continuous Forward Current Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25C 2Derate linearly above 25C Peak Forward Current (10s, 400Hz)2 THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -65C TO 150C 150C 400C/W Typical 160C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25C OPTO DIODE CORP. 750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 1 of 2 HI-REL GaAlAs IR EMITTERS 200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 100 125 AMBIENT TEMPERATURE (C) 150 NO HEAT SINK INFINITE HEAT SINK OD-880WJ 10 PEAK FORWARD CURRENT, Ip (amps) THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT t = 10s 1 t = 100s t = 500s MAXIMUM R AT ING S 0.1 t Ip T D= t T 0.01 0.01 0.1 1 DUTY CYCLE, D (%) 10 100 www..com T Y P IC AL C HAR AC T E R IS T IC S 100 RELATIVE POWER OUTPUT (%) DEGRADATION CURVE IF = 20mA 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) 90 IF = 50mA 80 80 IF = 100mA 70 TCASE = 25C UNITS PRE CONDITIONED AT IF = 80mA, t = 168 HOURS 60 40 60 20 50 101 102 103 STRESS TIME, (hrs) 104 105 0 -100 -80 -60 -40 -20 0 20 40 BEAM ANGLE, (deg) 60 80 100 4 FORWARD I-V CHARACTERISTICS 1.5 1.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, IF (amps) 3 RELATIVE POWER OUTPUT 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 2 1 0 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 0.5 -50 -25 0 25 50 AMBIENT TEMPERATURE (C) 75 100 100 SPECTRAL OUTPUT 1,000 POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT (%) 60 40 POWER OUTPUT, P (mW) o 80 100 10 DC PULSE 10s, 100Hz 20 0 750 800 850 900 WAVELENGTH, (nm) 950 1,000 1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 OPTO DIODE CORP. 750 Mitchell Road, Newbury Park, California 91320 Phone (805) 499-0335 FAX (805) 499-8108 2 of 2 |
Price & Availability of OD-880WJ
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